? 2011 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 45 a i dm t c = 25 c, pulse width limited by t jm 160 a i a t c = 25 c 64a e as t c = 25 c4j dv/dt i s i dm , v dd v dss , t j 150 c 50 v/ns p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, 1 minute 2500 v f c mounting force 20..120/4.5..27 n/lb. weight 5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 4ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 50 a t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 32a, note 1 94 m hiperfet tm power mosfet q3-class IXFR64N50Q3 v dss = 500v i d25 = 45a r ds(on) 94m t rr 250ns ds100347(06/11) n-channel enhancement mode fast intrinsic rectifier features z silicon chip on direct-copper bond (dcb) substrate z isolated mounting surface z low intrinsic gate resistance z 2500v~ electrical isolation z fast intrinsic rectifier z avalanche rated z low package inductance advantages z high power density z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls advance technical information (electrically isolated tab) g = gate d = drain s = source isoplus247 e153432 g s d isolated tab
IXFR64N50Q3 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 32a, note 1 25 42 s c iss 6950 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 937 pf c rss 93 pf r gi gate input resistance 0.13 t d(on) 36 ns t r 11 ns t d(off) 46 ns t f 9 ns q g(on) 145 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 32a 50 nc q gd 67 nc r thjc 0.25 c/w r thcs 0.15 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 64 a i sm repetitive, pulse width limited by t jm 256 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 250 ns q rm 1.54 c i rm 14 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 32a r g = 1 (external) i f = 32a, -di/dt = 100a/ s v r = 100v, v gs = 0v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. 1 = gate 2,4 = drain 3 = source isoplus247 (ixfr) outline
? 2011 ixys corporation, all rights reserved IXFR64N50Q3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 v ds - volts i d - amperes v gs = 10v 9v 8 v 7 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7 v 8 v 9 v 6 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 024681012 v ds - volts i d - amperes 6 v 7v 5v v gs = 10v 8v fig. 4. r ds(on) normalized to i d = 32a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 64a i d = 32a fig. 5. r ds(on) normalized to i d = 32a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 20406080100120 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXFR64N50Q3 ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 102030405060708090100 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 200 0.30.40.50.60.70.80.91.01.11.21.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 q g - nanocoulombs v gs - volts v ds = 250v i d = 32a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit 25s
? 2011 ixys corporation, all rights reserved ixys ref: f_80n50q3(q8) 6-20-11 IXFR64N50Q3 fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w
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